About the dependence of the sheet resistance on thickness of n+ layer

[Quemand]

Hello everyone,

We know that the optimal junction depth for Si cells is about 0.20 microns. If the junction depth (or emitter layer thickness) becomes larger, losses are induced by lower collection of photogenerated photons.

All i want to know is how sheet resistance depens on the thickness of emitter layer. Is true that the lower this thickness, the higher sheet resistance is? For example, a junction depth of about 0.14 um will cause better collection but the efficiency will decrease because of a possible higher sheet resistance ??

Thanks in advance for your help.